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STMicroelectronics Electronic Components Datasheet

STU10NB80 Datasheet

N-channel Power MOSFET

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STU10NB80
N - CHANNEL 800V - 0.65- 10A - Max220
PowerMESHMOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STU10NB80
800 V < 0.8
10 A
www.DataSheet4Us.comTYPICAL RDS(on) = 0.65
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
23
1
Max220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
s HIGH CURRENT, HIGH SPEED SWITCHING
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM()
Ptot
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
800
800
± 30
10
6.3
40
160
1.28
4
-65 to 150
150
(1) ISD ≤10 Α, ≤ 200 A/µs, VDD V(BR)DSS, Tj TJMAX
April 1999
Unit
V
V
V
A
A
A
W
W/oC
V/ns
oC
oC
1/5


STMicroelectronics Electronic Components Datasheet

STU10NB80 Datasheet

N-channel Power MOSFET

No Preview Available !

STU10NB80
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.78
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
www.DataSheet4U.com
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
10
660
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
IDSS
IGSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Tc = 100 oC
Min.
800
Typ.
Max.
Unit
V
1
50
± 100
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 5.5 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
0.65 0.8
10 A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 5.5 A
Min.
1.5
Typ.
10
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2900
350
33
pF
pF
pF
2/5


Part Number STU10NB80
Description N-channel Power MOSFET
Maker STMicroelectronics
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