Datasheet Details
| Part number | STU11NC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 119.19 KB |
| Description | N-channel Power MOSFET |
| Download | STU11NC60 Download (PDF) |
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Overview: N-CHANNEL 600V - 0.48Ω - 11A Max220 PowerMesh™ II MOSFET TYPE STU11NC60 www.DataSheet4U.com s TYPICAL s s s s STU11NC60 VDSS 600V RDS(on) < 0.55Ω ID 11 A RDS(on) = 0.
| Part number | STU11NC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 119.19 KB |
| Description | N-channel Power MOSFET |
| Download | STU11NC60 Download (PDF) |
|
|
|
The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLIES (UPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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