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STU11NC60 - N-channel Power MOSFET

Description

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Datasheet preview – STU11NC60

Datasheet Details

Part number STU11NC60
Manufacturer STMicroelectronics
File Size 119.19 KB
Description N-channel Power MOSFET
Datasheet download datasheet STU11NC60 Datasheet
Additional preview pages of the STU11NC60 datasheet.

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Full PDF Text Transcription

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N-CHANNEL 600V - 0.48Ω - 11A Max220 PowerMesh™ II MOSFET TYPE STU11NC60 www.DataSheet4U.com s TYPICAL s s s s STU11NC60 VDSS 600V RDS(on) < 0.55Ω ID 11 A RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED Max220 1 2 3 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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