STU11NM60ND Key Features
- The worldwide best RDS(on)- area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
STU11NM60ND | N-Channel MOSFET |