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STU16NC50 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLIES (UPS) s DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.

Overview

N-CHANNEL 500V - 0.22Ω - 16A Max220 PowerMesh™II MOSFET TYPE STU16NC50 www.DataSheet4U.com s TYPICAL s s s s STU16NC50 VDSS 500V RDS(on) < 0.27Ω ID 16 A RDS(on) = 0.