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STMicroelectronics Electronic Components Datasheet

STU16NC50 Datasheet

N-channel Power MOSFET

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STU16NC50
N-CHANNEL 500V - 0.22- 16A Max220
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STU16NC50
500V
< 0.27
16 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.22
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLIES (UPS)
s DC-AC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
23
1
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Value
500
500
±30
16
10
64
160
1.28
3
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)ISD 16A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
October 2001
1/8


STMicroelectronics Electronic Components Datasheet

STU16NC50 Datasheet

N-channel Power MOSFET

No Preview Available !

STU16NC50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
0.78
62.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
www.DataSheet4U.com
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
16
1000
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 9A
Min.
2
Typ.
3
0.22
Max.
4
0.27
Unit
V
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 9A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
18
2980
410
58
Max.
Unit
S
pF
pF
pF
2/8


Part Number STU16NC50
Description N-channel Power MOSFET
Maker STMicroelectronics
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STU16NC50 Datasheet PDF






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