STMicroelectronics STU70R1K3S
This device is an high voltage N-channel Power MOSFET. This product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.| Part No. | STU70R1K3S |
|---|---|
| Datasheet | STU70R1K3S Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STU70R1K3S 700 V 1.4 Ω 5A● Reduced switching losses
● Lower RDS(on) per area vs previous generation
● Low gate input resistance
● 100% avalanche tested
● Zener-protected
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status link STU70R1K3S Product summary Order code STU70R1K3S Marking 70R1K3S Package IPAK Packing Tube DS13159 - Rev 2 - August 2020 For further information contact your local STMicroelectronics sales office. STU70R1K3S Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) PTOT Drain current (pulsed) Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope di/dt(2) Peak diode recovery current slope dv/dt(3) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2.
