STU80N4F6 Description
This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6 $0Y Order code STU80N4F6 Table.
STU80N4F6 Key Features
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness