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STU80N4F6 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

6  $0Y Order code STU80N4F6 Table 1.

Overview

STU80N4F6 N-channel 40 V, 5.8 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a IPAK package Datasheet − production.

Key Features

  • TAB IPAK 3 2 1 Figure 1. Internal schematic diagram ' Ć7$% .
  •  Order code STU80N4F6 VDS 40 V RDS(on) max ID 6.3 mΩ 80 A.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.