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STMicroelectronics Electronic Components Datasheet

STV160NF03LA Datasheet

N-channel Power MOSFET

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STV160NF03LA
N-CHANNEL 30V - 0.0021- 160A PowerSO-10
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STV160NF03LA
30 V < 0.003 160 A
s TYPICAL RDS(on) = 0.0021
s LOW THRESHOLD DRIVE
s ULTRA LOW ON-RESISTANCE
s ULTRA FAST SWITCHING
s 100% AVALANCHE TESTED
s VERY LOW GATE CHARGE
s LOW PROFILE, VERY LOW PARASITIC
INDUCTANCE PowerSO-10 PACKAGE
DESCRIPTION
The STV160NF03LA represents the second gen-
eration of Application Specific STMicroelectronics
well established STripFET™ process based on a
very unique strip layout design. The resulting
MOSFET shows unrivalled high packing density
with ultra low on-resistance and superior switching
charactestics. Process simplification also trans-
lates into improved manufacturing reproducibility.
This device is particularly suitable for high current,
low voltage switching application where efficiency
is crucial
APPLICATIONS
s BUCK CONVERTERS IN HIGH
PERFORMANCE TELECOM AND VRMs DC-
DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID(**)
Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
Note: Marking will be STV160NF03AL
December 2000
10
1
PowerSO-10
INTERNAL SCHEMATIC DIAGRAM
CONNECTION DIAGRAM (TOP VIEW)
Value
Unit
30 V
30 V
± 15 V
160 A
113 A
640 A
210 W
1.4 W/°C
330 mJ
–65 to 175
°C
175 °C
(1) VDD = 35V, ID = 45A, RG = 22Ω , L = 330µH, Starting Tj=25°C
(**)Limited only maximum junction temperature allowed by
PowerSO-10
1/8


STMicroelectronics Electronic Components Datasheet

STV160NF03LA Datasheet

N-channel Power MOSFET

No Preview Available !

STV160NF03LA
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
0.71
50
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 80 A
VGS = 10 V, ID = 45 A
VGS = 8 V, ID = 80 A
VGS = 5 V, ID = 40 A
VGS = 10 V, ID=80 A;Tj = 175 °C
VGS = 8 V, ID=80 A; Tj = 175 °C
VGS = 5 V, ID=40 A; Tj = 175 °C
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
1
160
Typ.
2.1
2.05
2.2
4.2
Max.
3
3
4
7
6.6
8.8
15.4
Unit
V
m
m
m
m
m
m
m
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Rg
Ciss
Coss
Crss
Ciss
Coss
Crss
LS
Gate resistance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Internal Source Inductance
LD Internal Drain Inductance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 80 A
VDS = 0 V, f = 1 MHz, VGS = 0
VDS = 25 V, f = 1 MHz, VGS = 0
VDS = 0 V, f = 1 MHz, VGS = 0
Min.
Typ.
210
1.1
5350
1700
300
8200
12400
5200
Max.
Unit
S
pF
pF
pF
pF
pF
pF
From the Lead End (6mm from
Package Body) to the Die
Center
3 nH
Not Available on Surface Mounting
Package
2/8


Part Number STV160NF03LA
Description N-channel Power MOSFET
Maker ST Microelectronics
Total Page 8 Pages
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