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STW12NC60 - N-CHANNEL MOSFET

Description

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Full PDF Text Transcription

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www.DataSheet4U.com N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh™ II MOSFET TYPE STW12NC60 s s s s s STW12NC60 VDSS 600V RDS(on) < 0.55Ω ID 12 A TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 3 2 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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