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STW13NM60N - N-CHANNEL Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.36 Ω ID 11 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance TAB 3 2 1 TO-220FP 123 I²PAK TAB TAB 3 2 1 TO-220 3 2 1 IPAK 3 2 1 TO-247.

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Datasheet preview – STW13NM60N

Datasheet Details

Part number STW13NM60N
Manufacturer STMicroelectronics
File Size 541.85 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet STW13NM60N Datasheet
Additional preview pages of the STW13NM60N datasheet.

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Full PDF Text Transcription

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STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet — production data Features Order codes STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.36 Ω ID 11 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance TAB 3 2 1 TO-220FP 123 I²PAK TAB TAB 3 2 1 TO-220 3 2 1 IPAK 3 2 1 TO-247 Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
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