® STW14NB50
N-CHANNEL 500V - 0.40 Ω - 14A - TO-247
PowerMESH™ MOSFET
TYPE
STW14NB50
VDSS
500 V
RDS(on)
< 0.45 Ω
ID
14 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.40 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
www.DataSheet4U.com
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
ID
IDM(•)
Ptot
Parameter
Drain-source Voltage (VGS = 0)at Tc = 100 oC
Drain- gate Voltage (RGS = 20 kΩ)at Tc = 100 oC
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Value
500
500
± 30
14
8
52
190
1.51
Unit
V
V
V
A
A
A
W
W/oC
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
4
-65 to 150
150
(1) ISD ≤14 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
April 1999
1/5
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
