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STW18NB40FI - N-CHANNEL MOSFET

This page provides the datasheet information for the STW18NB40FI, a member of the STW18NB40 N-CHANNEL MOSFET family.

Description

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet preview – STW18NB40FI

Datasheet Details

Part number STW18NB40FI
Manufacturer STMicroelectronics
File Size 142.26 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STW18NB40FI Datasheet
Additional preview pages of the STW18NB40FI datasheet.

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Full PDF Text Transcription

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N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218 PowerMesh™ MOSFET TYPE STW18NB40 STH18NB40FI s s s s s STW18NB40 STH18NB40FI PRELIMINARY DATA VDSS 400 V 400 V RDS(on) < 0.26 Ω < 0.26 Ω ID 18.4 A 12.4 A TYPICAL RDS(on) = 0.19 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 ISOWATT218 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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