STW19NM50N mosfets equivalent, n-channel power mosfets.
Order codes VDS @ TJmax STF19NM50N STP19NM50N 550 V STW19NM50N
RDS(on) max 0.25 Ω
ID 14 A
* 100% avalanche tested
* Low input capacitance and gate charge
.
* Switching applications
' 7$% *
6
Description
These devices are N-channel Power MOSFETs developed using.
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and .
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