STW19NM60N datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

3 2 1 TO-247 Figure 1. Internal schematic diagram $4!" ' 3 Order code VDS (@Tjmax) STW19NM60N 650 V RDS(on) max. ID PTOT 0.285 Ω 13 A 110 W
* Desig.

Application

and AEC-Q101 qualified
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resi.

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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