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STW20N60M2-EP Datasheet N-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology.

Thanks to its strip layout and an AM01476v1_No_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

Product status link STW20N60M2-EP Product summary Order code STW20N60M2-EP Marking 20N60M2EP Package TO-247 Packing

Overview

STW20N60M2-EP N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-247 package 3 2 1.

Key Features

  • Order code VDS RDS(on) max. STW20N60M2-EP 600 V 0.278 Ω.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected ID 13 A D(2) G(1).