STW20N60M2-EP Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STW20N60M2-EP Features

* Order code VDS RDS(on) max. STW20N60M2-EP 600 V 0.278 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected ID 13 A D(2) G(1) Applications

STW20N60M2-EP General Description

This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology. Thanks to its strip layout and an AM01476v1_No_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching l.

STW20N60M2-EP Datasheet (253.19 KB)