STW22NM60N datasheet, mosfet equivalent, ST Microelectronics

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Features and benefits

Product(s) D(2) olete G(1) Obs S(3) t(s) - AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STW22NM60N 650 V 0.22 Ω 16 A
* 100% avalanche tested.

Application

* Switching applications Description This device is an N-channel Power MOSFET developed using the second generation.

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.

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