STW23NM60ND Key Features
- Fast-recovery body diode
- Low gate charge and input capacitance
- Low on-resistance RDS(on)
- 100% avalanche tested
- High dv/dt ruggedness
- Part: STW23NM60ND
- Manufacturer: STMicroelectronics (official site)
- Size: 567.43 KB
Other STW23NM60ND Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
STW23NM60ND | N-Channel MOSFET |
STW23NM60ND Description
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device.