| Part number | STW33N20 |
|---|---|
| Datasheet | STW33N20_STMicroelectronics.pdf |
| File Size | 138.09 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Un it V µA µA nA Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 100 I GSS ON (∗) Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Voltage Threshold V DS = VGS Test Cond ition s ID = 250 µ A ID = 16 A 33 Min. 4 0.085 Un it V Ω A Static Drain-source On V GS = 10 V Resistance On State Drain Current V DS > I D(on) x R DS(on)...
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