STMicroelectronics STW52N60DM6
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast- AM01476v1_tab recovery diode series.STW52N60DM6 Specifications
- Package : TO-247
- Drain-Source Resistance : 74mΩ
- Drain-Source Voltage : 600V
- Terminals : 3
- Max Power Dissipation : 357W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STW52N60DM6 |
|---|---|
| Datasheet | STW52N60DM6 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 45A N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STW52N60DM6 600 V 74 mΩ 45 A 3 2 1 TO-247 D(2, TAB)● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
G(1)● Switching applications
DESCRIPTION
S(3) Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STW52N60DM6 Product summary Order code STW52N60DM6 Marking 52N60DM6 Package TO-247 Packing Tube DS13632 - Rev 2 - November 2025 For further information, contact your local STMicroelectronics sales office. STW52N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol P...
