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STMicroelectronics Electronic Components Datasheet

STW54NK30Z Datasheet

N-CHANNEL MOSFET

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STW54NK30Z
N-CHANNEL 300V - 0.052- 54A TO-247
Zener-Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE
BVDSS RDS(on)
ID
Pw
STW54NK30Z 300 V < 0.060 54 A 300 W
s TYPICAL RDS(on) = 0.052
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
www.DatasShGeeAt4TUE.coCmHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 1: Package
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
DC CHOPPERs
s IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
Table 2: Order Codes
SALES TYPE
STW54NK30Z
MARKING
W54NK30Z
PACKAGE
TO-247
PACKAGING
TUBE
February 2005
Rev. 1
1/10


STMicroelectronics Electronic Components Datasheet

STW54NK30Z Datasheet

N-CHANNEL MOSFET

No Preview Available !

STW54NK30Z
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1)
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Tstg
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 54A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb
Tl
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering
Purpose
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Table 6: Gate-Source Zener Diode
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source
Breakdown Voltage
Igs=± 1mA (Open Drain)
Value
300
300
± 30
54
34
200
300
2.38
6000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
0.42
30
300
°C/W
°C/W
°C
Max Value
54
400
Unit
A
mJ
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/10


Part Number STW54NK30Z
Description N-CHANNEL MOSFET
Maker STMicroelectronics
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