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STW55NM50N - N-channel MOSFET

General Description

ObThis series of devices implements second -generation MDmesh™ technology.

This )revolutionary Power MOSFET associates a new t(svertical structure to the company’s strip layout to cyield one of the world’s lowest on-resistance and ugate charge.

It is therefore suitable for the most Obsolete Proddemanding high efficiency converters.

Overview

STW55NM50N N-channel 500 V, 0.040 Ω, 54 A, MDmesh™ II Power MOSFET.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STW55NM50N 550 V.