STW65N60DM6 Key Features
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
- Part: STW65N60DM6
- Description: N-channel Power MOSFET
- Manufacturer: STMicroelectronics
- Size: 331.92 KB
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