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STW65N60DM6 Datasheet PDF

STMicroelectronics STW65N60DM6

600V 46A N-channel Power MOSFET

Part No. STW65N60DM6
Datasheet STW65N60DM6 Download
Manufacturer
STMicroelectronics
Description 600V 46A N-channel Power MOSFET
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STW65N60DM6 datasheet page 1 preview

FEATURES

Order code VDS RDS(on) max. ID STW65N60DM6 STWA65N60DM6 600 V 71 mΩ 46 A
● Fast-recovery body diode
● Lower RDS(on) per area vs previous generation
● Low gate charge, input capacitance and resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected

APPLICATIONS

● Switching applications

DESCRIPTION

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status links STW65N60DM6 STWA65N60DM6 Product summary Order code STW65N60DM6 Marking 65N60DM6 Package TO-247 Packing Tube Order code STWA65N60DM6 Marking 65N60DM6 Package TO-247 long leads Packing Tube DS12314 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office.
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