STW6N120K3 - N-channel MOSFET

STMicroelectronics

Datasheet Details

Part number	STW6N120K3
Manufacturer	STMicroelectronics
File Size	400.38 KB
Description	N-channel MOSFET
Datasheet	STW6N120K3 Datasheet

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

3 2 1 TO-3PF TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1.

Overview

STFW6N120K3, STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 Ω typ.

Key Features

Order codes VDSS RDS(on) max ID Ptot STFW6N120K3 1200 V < 2.4 Ω 6 A 63 W STP6N120K3 1200 V < 2.4 Ω 6 A 150 W STW6N120K3 1200 V < 2.4 Ω 6 A 150 W.
100% avalanche tested.
Extremely large avalanche performance.
Gate charge minimized.
Very low intrinsic capacitances.
Zener-protected.

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