STW8N120K5 Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected
- Part: STW8N120K5
- Manufacturer: STMicroelectronics (official site)
- Size: 256.66 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STW8N80 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW8N90K5 | N-channel Power MOSFET |
| STW8NA60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW8NA80 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW8NC70Z | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
STW8N120K5 Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications S(3) AM01476v1_No_tab requiring superior power density and high efficiency.