STWA12N120K5
Description
( TO-220, TO-247 and TO-247 long leads) AM15557v3 These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Key Features
- Very low FoM (figure of merit)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected RDS(on) max. 690 mΩ ID 12 A G(1) G(1)
