STWA65N60DM6 Datasheet - STMicroelectronics

N-channel Power MOSFET

STWA65N60DM6 Features

* Order code VDS RDS(on) max. ID STW65N60DM6 STWA65N60DM6 600 V 71 mΩ 46 A

* Fast-recovery body diode

* Lower RDS(on) per area vs previous generation

* Low gate charge, input capacitance and resistance

* 100% avalanche tested

* Extremely high dv/dt rugg

STWA65N60DM6 General Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching.

STWA65N60DM6 Datasheet (331.92 KB)

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Datasheet Details

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STWA65N60DM6

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STMicroelectronics ↗

File Size:

331.92 KB

Description:

N-channel power mosfet.
STW65N60DM6, STWA65N60DM6 Datasheet N-channel 600 V, 60 mΩ typ., 46 A MDmesh DM6 Power MOSFETs in a TO‑247 and TO‑247 long leads packages 3 2 1 TO-24.

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STWA65N60DM6 Features

STWA65N60DM6 General Description

Datasheet Details

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