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STWA75N60DM6 - N-Channel MOSFET

Download the STWA75N60DM6 datasheet PDF. This datasheet also covers the STW75N60DM6 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fastrecovery diode series.

Key Features

  • 3 2 1 TO-247 3 12 TO-247 long leads D(2, TAB) Order codes VDS RDS(on) max. STW75N60DM6 STWA75N60DM6 600 V 36 mΩ.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 72 A G(1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STW75N60DM6-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STWA75N60M6 N-CHANNEL POWER MOSFET
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STWA70N60DM6 N-CHANNEL Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STW75N60DM6, STWA75N60DM6 Datasheet N-channel 600 V, 32 mΩ typ., 72 A MDmesh DM6 Power MOSFETs in TO-247 and TO-247 long leads packages Features 3 2 1 TO-247 3 12 TO-247 long leads D(2, TAB) Order codes VDS RDS(on) max. STW75N60DM6 STWA75N60DM6 600 V 36 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 72 A G(1) Applications • Switching applications S(3) Description AM01476v1_tab These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fastrecovery diode series.