STX724
STX724 is NPN MEDIUM POWER TRANSISTORS manufactured by STMicroelectronics.
Features
- TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY IN PLIANCE WITH THE 2002/93/EC EUROPEAN DIRECTIVE
- Applications
- -
- VOLTAGE REGULATION RELAY DRIVER GENERIC SWITCH
TO-92
Description
The STX724 is a NPN transistor manufactured using planar Technology resulting in rugged high performance devices.
Internal Schematic Diagram
Order codes
Part Number STX724 Marking X724 Package TO-92 Packing BULK
October 2005
Rev 1 1/9
.st. 9
1 Electrical Ratings
Table 1.
..
Electrical Ratings
Absolute Maximum Rating
Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IC = 0) Collector Current Collector Peak Current (t P < 5ms) Base Current Base Peak Current (t P < 5ms) Total dissipation at Tc = 25°C Storage Temperature Max. Operating Junction Temperature Value 60 30 5 3 6 1 2 0.9 -65 to 150 150 Unit V V V A A A A W °C
Symbol VCBO VCEO VEBO IC ICM IB IBM PTOT TSTG TJ
Table 2.
Symbol Rthj-case Rthj-amb
Thermal Data
Parameter Thermal Resistance Junction-Case ____________________Max Thermal Resistance Junction-Amb ____________________Max Value 44.6 139 Unit °C/W °C/W
2/9
2 Electrical Characteristics
Electrical Characteristics
Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (IC = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions VCE = 60V VCE = 30V VEB = 5V IC = 100μA IC = 10 m A IE = 100 μA IC = 1 A IC = 2 A IC = 3 A IB = 50 m A IB = 100 m A IB = 150 m A IB = 100 m A VCE = 2 V VCE = 2 V VCE = 2 V Ic= 0.1 A 100 80 30 100 60 30 5 0.4 0.7 1.1 1.2 Min. Typ. Max. 10 100 10 Unit μA μA μA V V V V V V V
Table 3. ..
Symbol ICES ICEO IEBO V(BR)CBO
V(BR)CEO Collector-Emitter Breakdown Note 1 Voltage (IB = 0) V(BR)EBO VCE(sat) Note 1 VBE(sat) Note 1 h FE f T Collector-Emitter Breakdown Voltage (IC = 0) Collector-Emitter Saturation Voltage
Base-Emitter Saturation...