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STX83003 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

General Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

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www.DataSheet4U.com ® STX83003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s ST83003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED s APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX83003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the STX93003, its complementary PNP transistor.