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TIP127-A Datasheet - ST Microelectronics

Transistors

TIP127-A General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Figure 1. Internal schematic diagrams NPN: R1 = 7 kΩ R2 = 70 Ω PNP: R1 = 1.

TIP127-A Datasheet (635.35 KB)

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TIP127-A Transistors ST Microelectronics

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