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TODV640 Datasheet

ALTERNISTORS

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TODV 640 ---> 1240
ALTERNISTORS
FEATURES
. HIGH COMMUTATION : > 142 A/ms (400Hz)
. INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : EB1734)
. HIGH VOLTAGE CAPABILITY : VDRM = 1200 V
A2
G
A1
DESCRIPTION
The TODV 640 ---> 1240 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
RMS on-state current
(360° conduction angle)
Parameter
Tc = 75 °C
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 2.5 ms
tp = 8.3 ms
I2t value
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
RD91
(Plastic)
Value
40
590
370
350
610
20
100
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
March 1995
TODV
Unit
640
840
1040
1240
600
800
1000
1200
V
1/5


STMicroelectronics Electronic Components Datasheet

TODV640 Datasheet

ALTERNISTORS

No Preview Available !

TODV 640 ---> 1240
THERMAL RESISTANCES
Symbol
Parameter
Rth (c-h) Contact (case-heatsink) with grease
Rth (j-c) DC Junction to case for DC
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
Value
0.1
1.2
0.9
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
IGT
VGT
VGD
tgt
IL
VD=12V (DC) RL=33
VD=12V (DC) RL=33
VD=VDRM RL=3.3k
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
IG=1.2 IGT
IH *
VTM *
IDRM
IRRM
IT= 500mA gate open
ITM= 60A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt * Linear slope up to VD=67%VDRM
gate open
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=125°C
I-II-III
I-II-III
I-II-III
I-II-III
I-III
II
MAX
MAX
MIN
TYP
TYP
TYP
MAX
MAX
MAX
MIN
(dI/dt)c *
(dV/dt)c = 200V/µs
(dV/dt)c = 10V/µs
Tj=125°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
MIN
Value
200
1.5
0.2
2.5
100
200
50
1.8
0.02
8
500
35
142
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
A/ms
2/5


Part Number TODV640
Description ALTERNISTORS
Maker STMicroelectronics
Total Page 5 Pages
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