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TYN0512 Datasheet

HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY

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TXN/TYN 0512 --->
TXN/TYN 1012
....FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
TXN Serie :
INSULATED VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
SCR
DESCRIPTION
The TYN/TXN 0512 ---> TYN/TXN 1012 Family
of Silicon Controlled Rectifiers uses a high per-
formance glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
AG
K
TO220AB
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
TXN Tc=80°C
TYN Tc=90°C
Average on-state current
(180° conduction angle,single phase circuit)
TXN Tc=80°C
TYN Tc=90°C
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp=8.3 ms
tp=10 ms
I2t value
tp=10 ms
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Value
12
8
125
120
72
100
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
TYN/T XN
Unit
0512 112 212 412 612 812 1012
50 100 200 400 600 800 1000 V
April 1995
1/5


STMicroelectronics Electronic Components Datasheet

TYN0512 Datasheet

HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY

No Preview Available !

TXN/TYN 0512 ---> TXN/TYN 1012
THERMAL RESISTANCES
Symbol
Rth (j-a) Junction to ambient
Rth (j-c) DC Junction to case for DC
Parameter
TXN
TYN
Value
60
3.5
2.5
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
IGT
VGT
VGD
tgt
IL
IH
VTM
IDRM
IRRM
Test Conditions
VD=12V (DC) RL=33
VD=12V (DC) RL=33
VD=VDRM RL=3.3k
VD=VDRM IG = 40mA
dIG/dt = 0.5A/µs
IG= 1.2 IGT
IT= 100mA gate open
ITM= 24A tp= 380µs
VDRM Rated
VRRM Rated
dV/dt
tq
Linear slope up to VD=67%VDRM
gate open
VD=67%VDRM ITM= 24A VR= 25V
dITM/dt=30 A/µs dVD/dt= 50V/µs
Tj=25°C
Tj=25°C
Tj= 125°C
Tj=25°C
MAX
MAX
MIN
TYP
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj= 125°C
Tj= 125°C
TYP
MAX
MAX
MAX
MIN
Tj= 125°C TYP
Value
15
1.5
0.2
2
50
30
1.6
0.01
3
200
70
Unit
°C/W
°C/W
Unit
mA
V
V
µs
mA
mA
V
mA
V/µs
µs
2/5


Part Number TYN0512
Description HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY
Maker STMicroelectronics
Total Page 5 Pages
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