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VNN7NV04P-E Datasheet OMNIFET II fully autoprotected Power MOSFET

Manufacturer: STMicroelectronics

General Description

The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.

Fault feedback can be detected by monitoring the voltage at the input pin.

Overview

VNN7NV04P-E, VNS7NV04P-E OMNIFET II fully autoprotected Power.

Key Features

  • Type VNN7NV04P-E VNS7NV04P-E.
  • RDS(on) 60 mΩ Ilim 6A Vclamp 40 V 2 SOT-223 1 2 3 SO-8 Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive.