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W25NM60N - STW25NM60N

General Description

du - OThis series of devices is realized with the second ro )generation of MDmesh™ technology.

This P t(srevolutionary MOSFET associates a new vertical te cstructure to the company’s strip layout to yield one le uof the world’s lowest on-resistance and gate dcharge.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N t(s)STB25NM60N-1 cSTF25NM60N uSTP25NM60N rod )STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A P t(s1. Limited only by maximum temperature allowed te c.
  • 100% avalanche tested le du.
  • Low input capacitance and gate charge so ro.
  • Low gate input resistance - Ob te P.

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STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID STB25NM60N t(s)STB25NM60N-1 cSTF25NM60N uSTP25NM60N rod )STW25NM60N 650 V 650 V 650 V 650 V 650 V < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω < 0.160 Ω 21 A 21 A 21 A(1) 21 A 21 A P t(s1. Limited only by maximum temperature allowed te c■ 100% avalanche tested le du■ Low input capacitance and gate charge so ro■ Low gate input resistance - Ob te PApplication ) le■ Switching applications ct(s bsoDescription du - OThis series of devices is realized with the second ro )generation of MDmesh™ technology.