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W26NM60 - STW26NM60

Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/11 STW26NM60,.

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Full PDF Text Transcription

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STW26NM60 STU26NM60, STU26NM60I N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh™ Power MOSFET TYPE VDSS RDS(on) ID STW26NM60 STU26NM60 STU26NM60I 600 V 600 V 600 V < 0.135 Ω < 0.135 Ω < 0.135 Ω 30 A 26 A 26 A n TYPICAL RDS(on) = 0.125Ω n HIGH dv/dt AND AVALANCHE CAPABILITIES n IMPROVED ESD CAPABILITY n LOW INPUT CAPACITANCE AND GATE CHARGE n LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
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