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W3N150 - STFW3N150

Description

Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.

Features

  • Type STFW3N150 STP3N150 STW3N150.
  • VDSS 1500 V 1500 V 1500 V RDS(on) max.

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Full PDF Text Transcription

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STFW3N150 STP3N150, STW3N150 N-channel 1500 V, 6 Ω, 2.5 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features Type STFW3N150 STP3N150 STW3N150 ■ ■ ■ ■ ■ VDSS 1500 V 1500 V 1500 V RDS(on) max. <9Ω <9Ω <9Ω ID PTOT 3 1 2 2.5 A 63 W 2.5 A 140 W 2.5 A 140 W TO-220 100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF plastic package Creepage distance path is 5.4 mm (typ.) for TO-3PF Figure 1. Internal schematic diagram TO-247 2 1 3 1 2 3 TO-3PF Application Switching applications $ Description Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
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