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STMicroelectronics Electronic Components Datasheet

W45NM50 Datasheet

STW45NM50

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STW45NM50
N-CHANNEL 550V @ Tjmax - 0.08- 45A TO-247
MDmesh™ MOSFET
Table 1: General Features
TYPE
VDSS
(@Tjmax)
RDS(on)
ID
STW45NM50
550V
< 0.1
45 A
s TYPICAL RDS(on) = 0.08
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizon-
tal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip tech-
nique yields overall dynamic performance that is
significantly better than that of similar competi-
tion’s products.
Figure 1: Package
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ family is very suitable for increas-
ing power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
STW45NM50
MARKING
W45NM50
PACKAGE
TO-247
PACKAGING
TUBE
March 2005
Rev. 2
1/9
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STMicroelectronics Electronic Components Datasheet

W45NM50 Datasheet

STW45NM50

No Preview Available !

STW45NM50
Table 3: Absolute Maximum ratings
Symbol
Parameter
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (*) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(*)Pulse width limited by safe operating area
(1)ISD 45A, di/dt 400A/µs, VDD V(BR)DSS, Tj TJMAX.
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Max
Rthj-amb Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering Purpose
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Value
±30
45
28.4
180
417
2.08
15
65 to 150
150
0.3
30
300
Max Value
20
810
Unit
V
A
A
A
W
W/°C
V/ns
°C
°C
°C/W
°C/W
°C
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
10
100
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30 V
±100
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
345
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 22.5 A
0.08 0.1
Unit
V
µA
µA
nA
V
2/9
Free Datasheet http://www.nDatasheet.com


Part Number W45NM50
Description STW45NM50
Maker STMicroelectronics
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