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STMicroelectronics Electronic Components Datasheet

W4N150 Datasheet

STW4N150

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STP4N150
STW4N150
N-CHANNEL 1500V - 5- 4A TO-220/TO-247
Very High Voltage PowerMESH™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STP4N150
STW4N150
1500 V < 7
1500 V < 7
4 A 160 W
4 A 160 W
s TYPICAL RDS(on) = 5
s AVALANCHE RUGGEDNESS
s GATE CHARGE MINIMIZED
s VERY LOW INTRINSIC CAPACITANCES
s HIGH SPEED SWITCHING
DESCRIPTION
Using the well consolidated high voltage MESH
OVERLAY™ process, STMicroelectronics has de-
signed an advanced family of Power MOSFETs
with outstanding performances. The strengthened
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, unrivalled gate charge and
switching characteristics.
Figure 1: Package
3
2
1
TO-220
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
s SWITCH MODE POWER SUPPLIES
Table 2: Order Codes
SALES TYPE
STP4N150
STW4N150
MARKING
P4N150
W4N150
PACKAGE
TO-220
TO-247
PACKAGING
TUBE
TUBE
July 2005
Rev. 3
1/11


STMicroelectronics Electronic Components Datasheet

W4N150 Datasheet

STW4N150

No Preview Available !

STP4N150 - STW4N150
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
1500
1500
± 30
4
2.5
12
160
1
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
°C
TO-220
0.78
62.5
TO-247
50
°C/W
°C/W
Max Value
4
350
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
1500
IDSS Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating,TC = 125°C
10
500
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
± 100
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
345
RDS(on)
Static Drain-source On VGS = 10 V, ID = 2 A
Resistance
57
Unit
V
µA
µA
nA
V
2/11


Part Number W4N150
Description STW4N150
Maker STMicroelectronics
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W4N150 Datasheet PDF





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