W54NK30Z mosfet equivalent, n-channel mosfet.
Figure 1: Package
TYPE
BVDSS RDS(on)
ID
Pw
STW54NK30Z 300 V < 0.060 Ω 54 A 300 W
s TYPICAL RDS(on) = 0.052 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE T.
Such series le complements ST full range of high voltage MOSo FETs including revolutionary MDmesh™ products.
3 2 1
TO-.
u The SuperMESH™ series is obtained through an d extreme optimization of ST’s well established ro strip-based PowerMESH™ layout. In addition to P pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
t.
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