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W8NC90Z - STW8NC90Z

General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW8NC90.

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STW8NC90Z N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STW8NC90Z 900 V < 1.38 Ω 7.6 A s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.