WH13009
Features
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
Applications
- Switching mode power supplies
Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds anh high voltage capability. It uses a Hollow Emitter structure to enhance switching speeds.
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3 2 1
TO-247 Figure 1. Internal schematic diagram
Table 1. Device summary Order code STWH13009
Marking WH13009
Package TO-247
Packaging Tube
October 2007
Rev 1
1/9
.st.
Absolute maximum ratings
1 Absolute maximum ratings
Table 2. Symbol
Absolute maximum ratings Parameter
VCEV VCEO VEBO
IC ICM IB IBM PTOT Tstg TJ
Collector-emitter voltage (VBE = -1.5V) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current
Collector peak current (tp < ms) Base current
Base peak current (tp < ms) Total dissipation at Tcase = 25°C Storage temperature
Max. operating junction temperature
Table 3. Thermal...
