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STMicroelectronics Electronic Components Datasheet

X0205NA Datasheet

1.25A sensitive gate SCR

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X02
1.25 A sensitive gate SCR
Features
on-state rms current: 1.25 A
repetitive peak off-state voltage: 600 V and
800 V
gate triggering current: 50 and 200 µA
Applications
ground fault circuit interrupters
overvoltage crowbar protection in power
supplies
capacitive ignition circuits
Description
The X02 SCR can be used as the on/off function
in applications where topology does not offer high
current for gate triggering.
This device is optimized in forward voltage drop
and inrush current capabilities for reduced power
losses and high reliability in harsh environments.
Table 1. Device summary
Order code
X0202MA
X0202MN
X0202NA
X0202NN
X0205MA
X0205NA
X0202NUF
600 V
Y
Y
Y
Voltage
800 V
Y
Y
Y
Y
A
G
K
A
G
A
K
SOT-223
X02xxN
A
KG
TO-92
X02xxA
A
K
G
SMBflat-3L
X0202NUF
Sensitivity µA
200
200
200
200
50
50
200
Package
TO-92
SOT-223
TO-92
SOT-223
TO-92
TO-92
SMBflat-3L
January 2011
Doc ID 7480 Rev 4
1/11
www.st.com
11


STMicroelectronics Electronic Components Datasheet

X0205NA Datasheet

1.25A sensitive gate SCR

No Preview Available !

Characteristics
1 Characteristics
X02
Table 2.
Symbol
Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified)
Parameter
Value
Unit
IT(RMS) On-state rms current (180 °Conduction angle)
IT(AV) Average on-state current (180 °Conduction angle)
ITSM Non repetitive surge peak on-state current
I²t I²t Value for fusing
di/dt
IGM
PG(AV)
Tstg
Tj
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TO-92
TL = 63 °C
SOT-223 Ttab = 99 °C
SMBflat-3L Ttab = 111 °C
TO-92
TL = 63 °C
SOT-223 Ttab = 99 °C
SMBflat-3L Ttab = 111 °C
tp = 8.3 ms Tj = 25 °C
tp = 10 ms
tp = 10 ms Tj = 25 °C
1.25
0.8
25
22.5
2.5
A
A
A
A2s
F = 60 Hz Tj = 125 °C
50 A/µs
tp = 20 µs
Tj = 125 °C
Tj = 125 °C
1.2
0.2
- 40 to + 150
- 40 to + 125
A
W
°C
Table 3.
Symbol
Electrical characteristics (TJ = 25 °C unless otherwise specified)
Test conditions
X0202
X0205
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VD = 12 V, RL = 140 Ω
VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ
IRG = 10 µA
IT = 50 mA, RGK = 1 kΩ
IG = 1 mA, RGK = 1 kΩ
VD = 67% VDRM, RGK = 1 kΩ
Tj = 125 °C
Tj = 110 °C
Min.
Max.
Max.
Min.
Min.
Max.
Max.
Min.
20
200 50
0.8
0.1
8
5
6
10 15
Unit
µA
V
V
V
mA
mA
V/µs
Table 4. Static electrical characteristics
Symbol
Test conditions
VTM ITM = 2.5 A, tp = 380 µs
VTO Threshold voltage
Rd Dynamic resistance
IDRM IRRM VDRM = VRRM, RGK = 1 kΩ
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Max.
X0202 X0205
1.45
0.9
200
5
500
Unit
V
V
mΩ
µA
µA
2/11 Doc ID 7480 Rev 4


Part Number X0205NA
Description 1.25A sensitive gate SCR
Maker STMicroelectronics
Total Page 11 Pages
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