Y60NM60 Datasheet - STMicroelectronics

STY60NM60

Y60NM60 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

Y60NM60 General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s .

Y60NM60 Datasheet (292.06 KB)

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Y60NM60

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STMicroelectronics ↗

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Sty60nm60.
STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh™Power MOSFET TYPE VDSS RDS(on) ID STY60NM60 600V < 0.055Ω 60 A TYPICAL RD.

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Y60NM60 Features

Y60NM60 General Description

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