Z01
Characteristics
1
Characteristics
Symbol
IT(RMS)
ITSM
I2t
dl/dt
IGM
PG(AV)
Tstg
Tj
Table 1. Absolute maximum ratings
Parameters
SOT-223
RMS on-state current (full sine wave)
TO-92
SMBflat-3L
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
I2t value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
F = 50 Hz
F = 60 Hz
tp = 10 ms
F = 120 Hz
tp = 20 µs
Operating junction temperature range
Ttab = 90 °C
TL = 50 °C
Ttab = 107 °C
tp = 20 ms
tp = 16.7 ms
Value
1
8
8.5
0.35
Tj = 125 °C
20
Tj = 125 °C
Tj = 125 °C
1
1
-40 to +150
-40 to +125
Unit
A
A
A2s
A/µs
A
W
°C
°C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Parameters
IGT(1)
VGT
VGD
IH(2)
VD = 12 V, RL = 30 Ω
VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C
IT = 50 mA
IL
IG = 1.2 IGT
dV/dt(2)
VD = 67 % VDRM gate open, Tj = 110 °C
(dV/dt)c(2) (dI/dt)c = 0.44 A/ms, Tj = 110 °C
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
Quadrant
I - II - III
IV
All
All
I - III - IV
II
03
3
Max.
5
Max.
Min.
Max. 7
Max. 7
Max. 15
Min. 10
Min. 0.5
Value
Z01
07 09
5
10
7
10
1.3
0.2
10 10
10 15
20 25
20 50
1
2
Unit
10
25
mA
25
V
V
25 mA
25
mA
50
100 V/µs
5 V/µs
DS2116 - Rev 11
page 2/16
