ELM5964-10F - C-Band Internally Matched FET

Description

The ELM5964-10F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50W system.

Features

High Output Power: P1dB=40.5dBm(Typ. ) High Gain: G1dB=10.0dB(Typ. ) High PAE: hadd=39%(Typ. ) Broad Band: 5.9～6.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package.

SUMITOMO

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Datasheet Details

Part number	ELM5964-10F
Manufacturer	SUMITOMO
File Size	356.88 KB
Description	C-Band Internally Matched FET
Datasheet	ELM5964-10F Datasheet
Additional preview pages of the ELM5964-10F datasheet.

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Full PDF Text Transcription

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ELM5964-10F C-Band Internally Matched FET FEATURES High Output Power: P1dB=40.5dBm(Typ.) High Gain: G1dB=10.0dB(Typ.) High PAE: hadd=39%(Typ.) Broad Band: 5.9～6.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package DESCRIPTION The ELM5964-10F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50W system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.

Published: Jul 14, 2014 |