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FLM3439-18F - C-Band Internally Matched FET

General Description

The FLM3439-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance.

Key Features

  • High Output Power: P1dB = 43.0dBm (Typ. ).
  • High Gain: G1dB = 10.5dB (Typ. ).
  • High PAE: hadd = 37% (Typ. ).
  • Low IM3 = -46dBc@Po = 32.0dBm.
  • Broad Band: 3.4 to 3.9GHz.
  • Impedance Matched Zin/Zout = 50ohm.
  • Hermetically Sealed Package.

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Datasheet Details

Part number FLM3439-18F
Manufacturer SUMITOMO
File Size 435.40 KB
Description C-Band Internally Matched FET
Datasheet download datasheet FLM3439-18F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLM3439-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 32.0dBm • Broad Band: 3.4 to 3.9GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM3439-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. SEDI's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25deg.C) Item Symbol Condition Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Tc = 25deg.