FLM5359-18F
Key Features
- High Output Power: P1dB = 43.0dBm (Typ.)
- High Gain: G1dB = 8.5dB (Typ.)
- High PAE: hadd = 35% (Typ.)
- Broad Band: 5.3 to 5.9GHz
- The drain-source operating voltage (V DS ) should not exceed 10 volts
- Part: FLM5359-18F
- Description: C-Band Internally Matched FET
- Manufacturer: SUMITOMO
- Size: 427.86 KB