FLM5964-8F-001 - C-Band Internally Matched FET

SUMITOMO

General Description

The FLM5964-8F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.

Key Features

High Output Power: P1dB=39.5dBm(Typ. ).
High Gain: G1dB=9.0dB(Typ. ).
High PAE: hadd=35%(Typ. ).
Broad Band: 5.85 to 6.75GHz.
Impedance Matched Zin/Zout = 50ohm.
Hermetically Sealed Package.

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FLM5964-8F-001 c-band internally matched fet by SUMITOMO - Datasheet Preview

Datasheet Details

Part number	FLM5964-8F-001
Manufacturer	SUMITOMO
File Size	210.68 KB
Description	C-Band Internally Matched FET
Datasheet	FLM5964-8F-001 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLM5964-8F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=39.5dBm(Typ.) • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.) • Broad Band: 5.85 to 6.75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-8F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 42.8 -65 to +175 +175 Unit V V W deg.C deg.