FLU35ZME1 Datasheet, SUMITOMO

High Output Power: P1dB=35.5dBm(typ.) High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION.

SUMITOMO’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MA.

The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SUMITOMO’s .