Datasheet4U Logo Datasheet4U.com

FLU35ZME1 - L-Band Medium & High Power GaAs FET

General Description

The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range.

This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications.

Key Features

  • High Output Power: P1dB=35.5dBm(typ. ) High Gain: G1dB=11.5dB(typ. ) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET.

📥 Download Datasheet

Datasheet Details

Part number FLU35ZME1
Manufacturer SUMITOMO
File Size 472.88 KB
Description L-Band Medium & High Power GaAs FET
Datasheet download datasheet FLU35ZME1 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FLU35ZM L-Band Medium & High Power GaAs FET ETC
FLU35XM L-Band Medium & High Power GaAs FET Eudyna Devices
FLU011 Supplementary Overcurrent Protection Littelfuse
FLU10XM L-Band Medium & High Power GaAs FET Eudyna Devices
FLU10XM L-Band Medium & High Power GaAs FET Fujitsu

Other Datasheets by SUMITOMO

Part Number Description
FLU10ZME1 L-Band Medium & High Power GaAs FET
FLU17ZME1 L-Band Medium & High Power GaAs FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FLU35ZME1 FEATURES High Output Power: P1dB=35.5dBm(typ.) High Gain: G1dB=11.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SUMITOMO’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Drain-Source Voltage Gate-Soutce Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 20.8 -55 to +150 150 Unit V V W deg.C deg.