FLU35ZME1
FEATURES
・High Output Power: P1dB=35.5dBm(typ.)
・High Gain: G1dB=11.5dB(typ.)
・Low Cost Plastic(SMT) Package
・Tape and Reel Available
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35ZME1 is a GaAs FET designed for base station and CPE
application up to a 4.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
SUMITOMO’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Item
Drain-Source Voltage
Gate-Soutce Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Rating
15
-5
20.8
-55 to +150
150
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25deg.C)
Item
Symbol
Condition
DC Input Voltage VDS < 10
Forward Gate Current
IGF
< 19.4
Reverse Gate Current
IGR
> -2.0
Gate Resistance
Rg 100
Unit
V
mA
mA
ohm
Channel Temperature
Tch
< 145
deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Drain Current
Trans Conductance
Pinch-off Voltage
Gate-Source Breakdown
Voltage
Symbol
IDSS
gm
Vp
VGSO
Test Conditions
VDS=5V,VGS=0V
VDS=5V,IDS=800mA
VDS=5V,IDS=60mA
IGS=-60mA
Min.
-
-
-1.0
-5
Limit
Typ.
1200
600
-2.0
-
Max.
1800
-
-3.5
-
Unit
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS=10V
f=2.0GHz
IDS=0.6IDSS(Typ.)
34.5 35.5 - dBm
10.5 11.5 - dB
Thermal Resistance
Rth Channel to Case
- 5 6 deg.C/W
Note1: Product supplied to this specification are 100% DC performance tested.
G.C.P.:Gain Compression Point
Note2:The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class III
2000 V min.
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kohm)
RoHS COMPLIANCE Yes
Edition 1.2
Aug. 2014
1
