Datasheet Summary
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
Features
- 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V
- 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V
- 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V
- Super high density cell...
