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SPN3414 - N-Channel MOSFET

Description

The SPN3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V.
  • 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V.
  • 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-3L package design.

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Datasheet Details

Part number SPN3414
Manufacturer SYNC
File Size 333.45 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN3414 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN3414 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. FEATURES  20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V  20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V  20V/2.8A,RDS(ON)=90mΩ@VGS=1.
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