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SPC4516 - N & P Pair MOSFET

Description

The SPC4516 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • N-Channel 30V/8.5A,RDS(ON)=14mΩ@VGS=10V 30V/7.8A,RDS(ON)=20mΩ@VGS=4.5V.
  • P-Channel -30V/-7.2A,RDS(ON)=25mΩ@VGS=-10V -30V/-5.6A,RDS(ON)=40mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

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Datasheet preview – SPC4516

Datasheet Details

Part number SPC4516
Manufacturer SYNC POWER
File Size 648.80 KB
Description N & P Pair MOSFET
Datasheet download datasheet SPC4516 Datasheet
Additional preview pages of the SPC4516 datasheet.

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Full PDF Text Transcription

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SPC4516 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4516 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 30V/8.5A,RDS(ON)=14mΩ@VGS=10V 30V/7.8A,RDS(ON)=20mΩ@VGS=4.
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